Infineon ISA Dual N-Channel Power Transistor, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250250N04LMDSXTMA1
- RS庫存編號:
- 348-910
- 製造零件編號:
- ISA250250N04LMDSXTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 20 件）*
TWD320.00
(不含稅)
TWD336.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 180 | TWD16.00 | TWD320.00 |
| 200 - 480 | TWD15.20 | TWD304.00 |
| 500 - 980 | TWD14.10 | TWD282.00 |
| 1000 - 1980 | TWD12.90 | TWD258.00 |
| 2000 + | TWD12.50 | TWD250.00 |
* 參考價格
- RS庫存編號:
- 348-910
- 製造零件編號:
- ISA250250N04LMDSXTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISA | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISA | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
相關連結
- Infineon ISA Type N 7.9 A 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon ISA Dual N-Channel MOSFET 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1
- Infineon ISA Type N 9.6 A 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Type N 10.2 A 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon PG-DSO-8-59
- Infineon PG-DSO-8
- Infineon XDPL8105XUMA1 PG-DSO-8-59
- Infineon CoolGaN Power Transistor 600 V Enhancement, 20-Pin PG-DSO-20-85