Infineon CoolGaN Power Transistor, 60 A, 600 V Enhancement, 20-Pin PG-DSO-20-85
- RS庫存編號:
- 273-2752
- 製造零件編號:
- IGO60R070D1AUMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD331.00
(不含稅)
TWD347.55
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 30 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 24 | TWD331.00 |
| 25 - 49 | TWD301.00 |
| 50 - 99 | TWD295.00 |
| 100 - 249 | TWD289.00 |
| 250 + | TWD284.00 |
* 參考價格
- RS庫存編號:
- 273-2752
- 製造零件編號:
- IGO60R070D1AUMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-DSO-20-85 | |
| Series | CoolGaN | |
| Mount Type | Surface | |
| Pin Count | 20 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 4.5 V | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-DSO-20-85 | ||
Series CoolGaN | ||
Mount Type Surface | ||
Pin Count 20 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 4.5 V | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.
Reduces EMI
System cost reduction savings
Capable of reverse conduction
Superior commutation ruggedness
Enables higher operating frequency
Low gate charge and low output charge
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