製造零件編號

Infineon IGOT65 Type N-Channel MOSFET, 28 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1

RS庫存編號:: 351-879
製造零件編號:: IGOT65R055D2AUMA1
製造商:: Infineon

Infineon IGOT65 Type N-Channel MOSFET, 28 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1

可享批量折扣

小計（1 件）*

TWD292.00

(不含稅)

TWD306.60

訂單超過 $1,300.00 免費送貨

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單位	每單位
1 - 9	TWD292.00
10 - 99	TWD263.00
100 - 499	TWD243.00
500 - 999	TWD225.00
1000 +	TWD202.00

* 參考價格

RS庫存編號:: 351-879
製造零件編號:: IGOT65R055D2AUMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	650V
	Series	IGOT65
	Package Type	PG-DSO-20
	Mount Type	Surface
	Pin Count	20
	Maximum Drain Source Resistance Rds	0.066Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10 V
	Maximum Power Dissipation Pd	89W
	Typical Gate Charge Qg @ Vgs	4.7nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 650V
	Series IGOT65
	Package Type PG-DSO-20
	Mount Type Surface
	Pin Count 20
	Maximum Drain Source Resistance Rds 0.066Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10 V
	Maximum Power Dissipation Pd 89W
	Typical Gate Charge Qg @ Vgs 4.7nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGOT65R055D2AUMA1

COO (Country of Origin):: ID

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGOT65 Type N-Channel MOSFET, 28 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1

訂單超過 $1,300.00 免費送貨

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