Infineon CoolGaN N channel-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1
- RS庫存編號:
- 762-901
- 製造零件編號:
- IGLT65R110B2AUMA1
- 製造商:
- Infineon
N
可享批量折扣
小計（1 件）*
TWD244.00
(不含稅)
TWD256.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月23日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD244.00 |
| 10 - 49 | TWD198.00 |
| 50 - 99 | TWD151.00 |
| 100 + | TWD121.00 |
* 參考價格
- RS庫存編號:
- 762-901
- 製造零件編號:
- IGLT65R110B2AUMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-16 | |
| Series | CoolGaN | |
| Mount Type | Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.61nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Maximum Power Dissipation Pd | 55W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Height | 2.35mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 10.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-16 | ||
Series CoolGaN | ||
Mount Type Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.61nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs -10V | ||
Maximum Power Dissipation Pd 55W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Height 2.35mm | ||
Standards/Approvals RoHS Compliant | ||
Width 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.
Optimized for soft switching operation
Dual‑gate for independent bi‑directional functionality
Superior performance
Versatile for diverse industrial applications
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