Infineon CoolGaN N channel-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1
- RS庫存編號:
- 762-901
- 製造零件編號:
- IGLT65R110B2AUMA1
- 製造商:
- Infineon
N
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TWD244.00
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TWD256.20
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- 加上 1,799 件從 2026年6月29日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD244.00 |
| 10 - 49 | TWD198.00 |
| 50 - 99 | TWD151.00 |
| 100 + | TWD121.00 |
* 參考價格
- RS庫存編號:
- 762-901
- 製造零件編號:
- IGLT65R110B2AUMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolGaN | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 55W | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 1.61nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Width | 10.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N channel | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolGaN | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 55W | ||
Maximum Gate Source Voltage Vgs -10V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 1.61nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Width 10.1mm | ||
Standards/Approvals RoHS Compliant | ||
Length 10.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.
Optimized for soft switching operation
Dual‑gate for independent bi‑directional functionality
Superior performance
Versatile for diverse industrial applications
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