Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- RS庫存編號:
- 273-5242
- 製造零件編號:
- BSO080P03SHXUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD229.00
(不含稅)
TWD240.45
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 90 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD45.80 | TWD229.00 |
| 50 - 95 | TWD38.40 | TWD192.00 |
| 100 - 245 | TWD35.40 | TWD177.00 |
| 250 - 995 | TWD32.80 | TWD164.00 |
| 1000 + | TWD32.20 | TWD161.00 |
* 參考價格
- RS庫存編號:
- 273-5242
- 製造零件編號:
- BSO080P03SHXUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-DSO-8 | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | -0.82V | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Length | 40mm | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-DSO-8 | ||
Series BSO080P03S H OptiMOSTM-P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf -0.82V | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Length 40mm | ||
Height 1.5mm | ||
Width 40 mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
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