Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8
- RS庫存編號:
- 273-2814
- 製造零件編號:
- ISC011N03L5SATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD123.00
(不含稅)
TWD129.15
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 85 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD24.60 | TWD123.00 |
| 50 - 495 | TWD24.20 | TWD121.00 |
| 500 - 995 | TWD23.80 | TWD119.00 |
| 1000 - 2495 | TWD23.40 | TWD117.00 |
| 2500 + | TWD23.00 | TWD115.00 |
* 參考價格
- RS庫存編號:
- 273-2814
- 製造零件編號:
- ISC011N03L5SATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOSTM | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOSTM | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 96W | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel MOSFET and optimized for high performance buck converter. This MOSFET is qualified according to JEDEC standard and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
相關連結
- Infineon OptiMOSTM Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8 ISC011N03L5SATMA1
- Infineon OptiMOSTM Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7N030ATMA1
- Infineon OptiMOSTM Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-43 IAUCN04S7L005ATMA1
- Infineon OptiMOSTM Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7L009ATMA1
- Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ040N03L5ISATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1