Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V
- RS庫存編號:
- 244-5391
- 製造零件編號:
- FP25R12W2T4B11BOMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 件）*
TWD1,352.00
(不含稅)
TWD1,419.60
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD1,352.00 |
| 2 - 2 | TWD1,324.00 |
| 3 - 3 | TWD1,299.00 |
| 4 - 4 | TWD1,273.00 |
| 5 + | TWD1,248.00 |
* 參考價格
- RS庫存編號:
- 244-5391
- 製造零件編號:
- FP25R12W2T4B11BOMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 175W | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 12mm | |
| Series | FP25R12W2T4B11B | |
| Length | 51mm | |
| Width | 42.5 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 175W | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 12mm | ||
Series FP25R12W2T4B11B | ||
Length 51mm | ||
Width 42.5 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
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