Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
- RS庫存編號:
- 244-5394
- 製造零件編號:
- FP25R12W2T4BOMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD1,291.00
(不含稅)
TWD1,355.55
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 15 件從 2026年9月17日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 1 | TWD1,291.00 |
| 2 - 2 | TWD1,265.00 |
| 3 - 3 | TWD1,239.00 |
| 4 - 4 | TWD1,215.00 |
| 5 + | TWD1,191.00 |
* 參考價格
- RS庫存編號:
- 244-5394
- 製造零件編號:
- FP25R12W2T4BOMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 39 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 175 W | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 39 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 175 W | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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