Infineon FP25R12W2T4BOMA1 IGBT Module 1.2 kV
- RS庫存編號:
- 244-5394
- 製造零件編號:
- FP25R12W2T4BOMA1
- 製造商:
- Infineon
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TWD1,803.00
(不含稅)
TWD1,893.15
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD1,803.00 |
| 2 - 2 | TWD1,767.00 |
| 3 - 3 | TWD1,730.00 |
| 4 - 4 | TWD1,697.00 |
| 5 + | TWD1,664.00 |
* 參考價格
- RS庫存編號:
- 244-5394
- 製造零件編號:
- FP25R12W2T4BOMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 175W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Width | 42.5mm | |
| Length | 51mm | |
| Height | 12mm | |
| Series | FP25R12W2T4B | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 175W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Width 42.5mm | ||
Length 51mm | ||
Height 12mm | ||
Series FP25R12W2T4B | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon FP25R12W2T4B Series IGBT Module, 1200V Collector-Emitter Voltage, 175W Power Dissipation - FP25R12W2T4BOMA1
This IGBT module is a power semiconductor device designed to switch and control high-voltage DC and AC loads in industrial applications. It combines multiple switching elements into a single Compact package to manage significant power dissipation while operating across a wide ambient temperature range.
Features and Benefits:
• 1200V collector-emitter rating for high-voltage switching capability
• 175W maximum power dissipation to handle elevated thermal loads
• Vce(sat) 2.25V for reduced conduction losses during on-state
• Gate-emitter withstand of 20V to protect control inputs
• Seven-transistor configuration to support complex switching arrangements
• Operable from -40 to 150°C for wide thermal headroom
• 175W maximum power dissipation to handle elevated thermal loads
• Vce(sat) 2.25V for reduced conduction losses during on-state
• Gate-emitter withstand of 20V to protect control inputs
• Seven-transistor configuration to support complex switching arrangements
• Operable from -40 to 150°C for wide thermal headroom
Applications
• Suitable for traction inverter stages in power conversion systems
• Ideal for industrial motor controllers requiring high-voltage devices
• Used with medium-voltage UPS and power backup systems
• Can be used for welding power supplies needing robust switches
• Used for renewable energy inverters handling elevated DC voltages
• Ideal for industrial motor controllers requiring high-voltage devices
• Used with medium-voltage UPS and power backup systems
• Can be used for welding power supplies needing robust switches
• Used for renewable energy inverters handling elevated DC voltages
What maximum junction temperature can the device tolerate?
The maximum operating temperature specified is 150°C.
How many switching elements are integrated in the package?
The module contains seven transistors integrated into a single unit.
What certification or environmental standard is noted for material compliance?
The unit meets RoHS requirements indicating restricted hazardous substances compliance.
What physical footprint should be allowed for PCB or heatsink layout?
The module measures 42.5 mm in width, 51 mm in length and 12 mm in height.
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