Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V

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小計(1 件)*

TWD1,113.00

(不含稅)

TWD1,168.65

(含稅)

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單位
每單位
1 - 1TWD1,113.00
2 - 2TWD1,090.00
3 - 3TWD1,069.00
4 - 4TWD1,048.00
5 +TWD1,026.00

* 參考價格

包裝方式:
RS庫存編號:
244-5387
製造零件編號:
FP15R12W1T4BOMA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

130W

Number of Transistors

7

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

FP15R12W1T4B

Width

33.8 mm

Length

62.8mm

Height

12mm

Standards/Approvals

RoHS

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.

Electrical features

Low switching losses, low inductive design

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

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