Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V

可享批量折扣

小計(1 件)*

TWD3,392.00

(不含稅)

TWD3,561.60

(含稅)

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  • 2026年5月19日 發貨
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1 - 1TWD3,392.00
2 - 2TWD3,323.00
3 +TWD3,258.00

* 參考價格

包裝方式:
RS庫存編號:
244-5848
製造零件編號:
FP75R12KT4B11BOSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

385 W

Number of Transistors

7

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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