製造零件編號

Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V

Name: Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V
Brand: Infineon
SKU: 244-5848
Price: 3561.60 TWD
Availability: BackOrder

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可享批量折扣

小計（1 件）*

TWD3,392.00

(不含稅)

TWD3,561.60

(含稅)

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* 參考價格

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	385W
	Number of Transistors	7
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Series	FP75R12KT4B11B
	Standards/Approvals	RoHS
	Height	17mm
	Width	62 mm
	Length	122mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 385W
	Number of Transistors 7
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Series FP75R12KT4B11B
	Standards/Approvals RoHS
	Height 17mm
	Width 62 mm
	Length 122mm
	Automotive Standard No

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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