Infineon F475R06W1E3BOMA1 Emitter-Collector, Quad (2 x Dual) IGBT Module, 100 A 600 V
- RS庫存編號:
- 244-5370
- 製造零件編號:
- F475R06W1E3BOMA1
- 製造商:
- Infineon
可享批量折扣
小計(1 件)*
TWD1,103.00
(不含稅)
TWD1,158.15
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年8月02日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 1 | TWD1,103.00 |
| 2 - 2 | TWD1,081.00 |
| 3 - 3 | TWD1,058.00 |
| 4 - 4 | TWD1,037.00 |
| 5 + | TWD1,016.00 |
* 參考價格
- RS庫存編號:
- 244-5370
- 製造零件編號:
- F475R06W1E3BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 275 W | |
| Number of Transistors | 4 | |
| Configuration | Emitter-Collector, Quad (2 x Dual) | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 275 W | ||
Number of Transistors 4 | ||
Configuration Emitter-Collector, Quad (2 x Dual) | ||
The infineon IGBT module is suitable for auxiliary inverters, UPS systems, inductive heating and welding and solar applications etc.
Electrical features
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
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