Infineon FP100R12KT4BOSA1 IGBT Module 1.2 kV
- RS庫存編號:
- 244-5379
- 製造零件編號:
- FP100R12KT4BOSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 托盤，共 10 件）*
TWD37,963.00
(不含稅)
TWD39,861.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年4月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 10 - 10 | TWD3,796.30 | TWD37,963.00 |
| 20 + | TWD3,720.40 | TWD37,204.00 |
* 參考價格
- RS庫存編號:
- 244-5379
- 製造零件編號:
- FP100R12KT4BOSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 515W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 62mm | |
| Series | FP100R12KT4 | |
| Length | 122mm | |
| Standards/Approvals | RoHS | |
| Height | 17mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 515W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 150°C | ||
Width 62mm | ||
Series FP100R12KT4 | ||
Length 122mm | ||
Standards/Approvals RoHS | ||
Height 17mm | ||
Automotive Standard No | ||
Infineon FP100R12KT4 Series IGBT Module, 1200V Max Collector-Emitter Voltage, 515W Maximum Power Dissipation - FP100R12KT4BOSA1
This IGBT module is a high-voltage switching component designed for power-electronics applications requiring elevated voltage handling and thermal endurance. It is intended to manage significant power dissipation in industrial environments and operates across a wide temperature range, offering compatibility where automotive-grade alternatives are not required.
Features and Benefits:
• 1200 V blocking capability enabling high-voltage switching
• 515 W power dissipation capacity for heavy-duty loads
• VGE limit of 20 V for controlled gate-drive design
• VCE(sat) of 2.1 V reducing conduction losses under load
• Seven-transistor configuration providing dense switching topology
• 150 °C maximum junction rating for high-temperature operation
• 515 W power dissipation capacity for heavy-duty loads
• VGE limit of 20 V for controlled gate-drive design
• VCE(sat) of 2.1 V reducing conduction losses under load
• Seven-transistor configuration providing dense switching topology
• 150 °C maximum junction rating for high-temperature operation
Applications
• Suitable for industrial motor-drive inverter stages
• Ideal for medium-voltage power converters and UPS systems
• Used with high-power switching arrays in renewable inverters
• Can be used for traction and heavy-equipment power modules
• Ideal for medium-voltage power converters and UPS systems
• Used with high-power switching arrays in renewable inverters
• Can be used for traction and heavy-equipment power modules
What gate-drive constraint should be observed?
The device requires gate-emitter voltages not exceeding 20 V to prevent gate damage.
How does thermal tolerance affect cooling design?
A maximum operating temperature of 150 °C permits smaller heatsink margins but still requires an adequate thermal Interface and cooling for continuous 515 W dissipation.
What electrical stress does the module withstand during blocking?
It is specified to withstand collector-emitter voltages up to 1200 V in off-state conditions.
How many switching elements are present internally?
The module contains seven transistors to support multi-switch topologies.
Are there any material restrictions for selection?
The unit conforms to RoHS requirements and therefore excludes certain restricted substances.
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