製造零件編號

Infineon F475R06W1E3BOMA1 Emitter-Collector, Quad (2 x Dual) IGBT Module, 100 A 600 V

RS庫存編號:: 244-5369
製造零件編號:: F475R06W1E3BOMA1
製造商:: Infineon

Infineon F475R06W1E3BOMA1 Emitter-Collector, Quad (2 x Dual) IGBT Module, 100 A 600 V

可享批量折扣

小計（1 托盤，共 24 件）*

TWD24,026.40

(不含稅)

TWD25,227.84

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年7月30日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每托盤*
24 - 24	TWD1,001.10	TWD24,026.40
48 - 48	TWD981.00	TWD23,544.00
72 +	TWD961.40	TWD23,073.60

* 參考價格

RS庫存編號:: 244-5369
製造零件編號:: F475R06W1E3BOMA1
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	+/-20V
	Maximum Power Dissipation	275 W
	Number of Transistors	4
	Configuration	Emitter-Collector, Quad (2 x Dual)

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage +/-20V
	Maximum Power Dissipation 275 W
	Number of Transistors 4
	Configuration Emitter-Collector, Quad (2 x Dual)

Datasheet - F475R06W1E3BOMA1

The infineon IGBT module is suitable for auxiliary inverters, UPS systems, inductive heating and welding and solar applications etc.

Electrical features
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps

Infineon F475R06W1E3BOMA1 Emitter-Collector, Quad (2 x Dual) IGBT Module, 100 A 600 V

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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