Infineon FP10R12W1T4BOMA1 IGBT Module 1.2 kV
- RS庫存編號:
- 244-5383
- 製造零件編號:
- FP10R12W1T4BOMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 托盤，共 24 件）*
TWD22,262.40
(不含稅)
TWD23,375.52
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 24 - 24 | TWD927.60 | TWD22,262.40 |
| 48 - 48 | TWD909.10 | TWD21,818.40 |
| 72 + | TWD890.90 | TWD21,381.60 |
* 參考價格
- RS庫存編號:
- 244-5383
- 製造零件編號:
- FP10R12W1T4BOMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 105W | |
| Number of Transistors | 7 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 33.8mm | |
| Series | FP10R12W1T4B | |
| Length | 62.8mm | |
| Height | 12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 105W | ||
Number of Transistors 7 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 33.8mm | ||
Series FP10R12W1T4B | ||
Length 62.8mm | ||
Height 12mm | ||
Automotive Standard No | ||
Infineon FP10R12W1T4B Series IGBT Module, 1200V Maximum Collector-Emitter Voltage, 105W Maximum Power Dissipation - FP10R12W1T4BOMA1
This IGBT module is a high-voltage semiconductor assembly designed to switch and control power in industrial electronics. It provides rugged operation across a wide thermal range and is suitable for systems requiring substantial voltage blocking and moderate power dissipation. The device is intended for applications demanding reliable switching at elevated temperatures while conforming to RoHS material restrictions.
Features and Benefits:
• 1200 V blocking capability enables high-voltage switching applications
• 105 W power dissipation allows sustained thermal loading
• 7-transistor configuration increases switching density per package
• 20 V gate-emitter rating supports robust gate-drive margins
• VCE(sat) 2.25 V typical reduces conduction losses during on-state
• Operates to 150 °C for high-temperature environments
• 105 W power dissipation allows sustained thermal loading
• 7-transistor configuration increases switching density per package
• 20 V gate-emitter rating supports robust gate-drive margins
• VCE(sat) 2.25 V typical reduces conduction losses during on-state
• Operates to 150 °C for high-temperature environments
Applications
• Suitable for industrial motor inverter stages
• Ideal for medium-power renewable energy converters
• Used with power supplies requiring high-voltage switching
• Can be used for traction auxiliary converters
• Appropriate for induction heating power stages
• Ideal for medium-power renewable energy converters
• Used with power supplies requiring high-voltage switching
• Can be used for traction auxiliary converters
• Appropriate for induction heating power stages
What temperature range can it reliably operate within?
It functions across a minimum of −40 °C up to a maximum of 150 °C.
What is the maximum collector-emitter voltage capability?
The device supports up to 1200 V between collector and emitter.
How much power can the module dissipate under load?
It can dissipate a maximum of 105 W of power.
What gate drive voltage limit must be observed?
The gate-emitter voltage must not exceed 20 V.
Is the module compliant with common environmental standards?
It meets RoHS requirements for restricted substances.
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