Infineon FP25R12W2T4B11BOMA1 IGBT Module 1.2 kV
- RS庫存編號:
- 244-5389
- 製造零件編號:
- FP25R12W2T4B11BOMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 托盤，共 15 件）*
TWD20,311.50
(不含稅)
TWD21,327.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 15 - 15 | TWD1,354.10 | TWD20,311.50 |
| 30 - 30 | TWD1,327.10 | TWD19,906.50 |
| 45 + | TWD1,300.50 | TWD19,507.50 |
* 參考價格
- RS庫存編號:
- 244-5389
- 製造零件編號:
- FP25R12W2T4B11BOMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 175W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 12mm | |
| Series | FP25R12W2T4B11B | |
| Width | 42.5mm | |
| Length | 51mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 175W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 12mm | ||
Series FP25R12W2T4B11B | ||
Width 42.5mm | ||
Length 51mm | ||
Automotive Standard No | ||
Infineon FP25R12W2T4B11B Series IGBT Module, 175W Maximum Power Dissipation, 1200V Max Collector Emitter Voltage - FP25R12W2T4B11BOMA1
This IGBT module is a high-voltage power switching device designed for demanding industrial applications. It combines multiple transistors in a single package to manage high collector-emitter voltages and significant power dissipation while operating across a wide temperature range.
Features and Benefits:
• Handles 1200V collector-emitter voltage for high-voltage systems
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels
Applications
• Suitable for industrial motor drives requiring high-voltage switching
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry
What ambient range can it withstand?
It is specified to function down to −40°C and up to 150°C.
How does the gate-emitter limit affect driver selection?
Gate drivers must not exceed the 20V gate-emitter rating to avoid overstress.
What electrical characteristic reduces energy loss during conduction?
The module’s collector-emitter saturation voltage of 2.25V limits conduction losses.
How many switching elements are integrated in the package?
The module contains seven discrete transistors within a single enclosure.
Is the product suitable for environmentally restricted manufacturing?
It meets RoHS requirements and is therefore compliant with lead-free process constraints.
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