Infineon 650 V 2 A Semiconductor Silicon Carbide Diode 5-Pin PG-VSON-4 IDL02G65C5XUMA2
- RS庫存編號:
- 249-6931
- 製造零件編號:
- IDL02G65C5XUMA2
- 製造商:
- Infineon
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- RS庫存編號:
- 249-6931
- 製造零件編號:
- IDL02G65C5XUMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | Semiconductor | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | XDL02G65 | |
| Rectifier Type | Silicon Carbide Diode | |
| Pin Count | 5 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 21A | |
| Peak Reverse Current Ir | 240μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type Semiconductor | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series XDL02G65 | ||
Rectifier Type Silicon Carbide Diode | ||
Pin Count 5 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 21A | ||
Peak Reverse Current Ir 240μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new. It has more compact design and thin-wafer technology.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC1 for target applications
Breakdown voltage tested at 4.5 mA2
Optimized for high temperature operation
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