Infineon 650 V 4 A Rectifier & Schottky Diode 5-Pin PG-VSON-4 IDL04G65C5XUMA2
- RS庫存編號:
- 258-0966
- 製造零件編號:
- IDL04G65C5XUMA2
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 2 件）*
TWD67.00
(不含稅)
TWD70.36
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,966 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD33.50 | TWD67.00 |
| 10 - 98 | TWD33.00 | TWD66.00 |
| 100 - 248 | TWD32.50 | TWD65.00 |
| 250 - 498 | TWD32.00 | TWD64.00 |
| 500 + | TWD31.50 | TWD63.00 |
* 參考價格
- RS庫存編號:
- 258-0966
- 製造零件編號:
- IDL04G65C5XUMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | IDL04G65C5 | |
| Pin Count | 5 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 70μA | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series IDL04G65C5 | ||
Pin Count 5 | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 70μA | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC Schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit.
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behaviour
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
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