Infineon 650 V 6 A Rectifier & Schottky Diode 5-Pin PG-VSON-4 IDL06G65C5XUMA2
- RS庫存編號:
- 249-6933
- 製造零件編號:
- IDL06G65C5XUMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD67.00
(不含稅)
TWD70.35
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,000 件從 2026年3月02日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD67.00 |
| 10 - 99 | TWD60.00 |
| 100 - 249 | TWD53.00 |
| 250 - 499 | TWD49.00 |
| 500 + | TWD43.00 |
* 參考價格
- RS庫存編號:
- 249-6933
- 製造零件編號:
- IDL06G65C5XUMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | XDL06G65 | |
| Pin Count | 5 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 0.11mA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 36A | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series XDL06G65 | ||
Pin Count 5 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 0.11mA | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 36A | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new. It has more compact design and thin-wafer technology.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC1 for target applications
Breakdown voltage tested at 4.5 mA2
Optimized for high temperature operation
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