Infineon 650 V 12 A Rectifier & Schottky Diode PG-VSON-4 IDL12G65C5XUMA2
- RS庫存編號:
- 258-0971
- 製造零件編號:
- IDL12G65C5XUMA2
- 製造商:
- Infineon
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可享批量折扣
小計（1 件）*
TWD109.00
(不含稅)
TWD114.45
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,000 件從 2026年3月02日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD109.00 |
| 10 - 99 | TWD98.00 |
| 100 - 249 | TWD92.00 |
| 250 - 499 | TWD80.00 |
| 500 + | TWD76.00 |
* 參考價格
- RS庫存編號:
- 258-0971
- 製造零件編號:
- IDL12G65C5XUMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDL12G65C5 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 505A | |
| Peak Reverse Current Ir | 190μA | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1) | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDL12G65C5 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 505A | ||
Peak Reverse Current Ir 190μA | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1) | ||
Automotive Standard No | ||
The Infineon CoolSiC Schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit.
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behaviour
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
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