Infineon 650 V 4 A Rectifier & Schottky Diode 5-Pin PG-VSON-4
- RS庫存編號:
- 258-0965
- 製造零件編號:
- IDL04G65C5XUMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD85,500.00
(不含稅)
TWD89,760.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月08日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD28.50 | TWD85,500.00 |
| 6000 + | TWD27.70 | TWD83,100.00 |
* 參考價格
- RS庫存編號:
- 258-0965
- 製造零件編號:
- IDL04G65C5XUMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDL04G65C5 | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Pin Count | 5 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Reverse Current Ir | 70μA | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDL04G65C5 | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Pin Count 5 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Reverse Current Ir 70μA | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC Schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit.
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behaviour
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
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