Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2
- RS庫存編號:
- 218-6299
- 製造零件編號:
- IDH06G65C5XKSA2
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（50 件, 每管50個）*
TWD3,255.00
(不含稅)
TWD3,418.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 200 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD65.10 | TWD3,255.00 |
| 100 - 150 | TWD63.60 | TWD3,180.00 |
| 200 + | TWD62.30 | TWD3,115.00 |
* 參考價格
- RS庫存編號:
- 218-6299
- 製造零件編號:
- IDH06G65C5XKSA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | SiC Silicon Carbide Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 54A | |
| Maximum Operating Temperature | 175°C | |
| Height | 29.95mm | |
| Length | 10.2mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 4.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type SiC Silicon Carbide Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 750μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 54A | ||
Maximum Operating Temperature 175°C | ||
Height 29.95mm | ||
Length 10.2mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 4.5mm | ||
Automotive Standard No | ||
Infineon 5th Generation thinQ!TM Series SiC Silicon Carbide Diode, 6A Max Continuous Forward Current, 650V Peak Reverse Repetitive Voltage - IDH06G65C5XKSA2
This SiC silicon carbide diode is a high-voltage Schottky rectifier designed for power conversion and switching applications requiring fast recovery and thermal resilience. It operates across an extended temperature range and is supplied in a through-hole TO-220 package suited to conventional heatsinking and mounting methods.
Features and Benefits:
• 650V Peak reverse rating enables high-voltage rectification
• 6A continuous forward current supports sustained load conduction
• 1.7V maximum forward voltage reduces conduction losses
• 54A surge current capacity handles transient inrush events
• 750μA Peak reverse current ensures low reverse leakage
• -55°C to 175°C operating range permits high-temperature operation
• 6A continuous forward current supports sustained load conduction
• 1.7V maximum forward voltage reduces conduction losses
• 54A surge current capacity handles transient inrush events
• 750μA Peak reverse current ensures low reverse leakage
• -55°C to 175°C operating range permits high-temperature operation
Applications
• Suitable for power supplies in industrial converters
• Ideal for automotive-adjacent power electronics (non-automotive standard)
• Used with through-hole assemblies requiring TO-220 mounting
• Can be used for high-voltage DC link rectification
• Used for surge-tolerant input rectifier stages
• Ideal for automotive-adjacent power electronics (non-automotive standard)
• Used with through-hole assemblies requiring TO-220 mounting
• Can be used for high-voltage DC link rectification
• Used for surge-tolerant input rectifier stages
What mounting method does it require?
It is intended for through-hole mounting in a TO-220 package which allows attachment to standard heatsinks.
How many electrical connections are present?
The device provides two pins for electrical connection consistent with single-diode rectifier topology.
Which standards were used in reliability assessment?
Qualification and testing reference J-STD-20 and JESD22 standards.
What type of rectifier topology is implemented?
The part employs a Schottky rectifier structure using silicon carbide semiconductor material.
What are the physical package dimensions?
The component measures 10.2 mm in length, 4.5 mm in width and 29.95 mm in height.
相關連結
- Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- Infineon 1200 V 16 A Industrial Power Control Diode Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode 2-Pin
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD12G65C6XTMA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD06G65C6XTMA1