Infineon 1200 V 16 A Industrial Power Control Diode Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode 2-Pin
- RS庫存編號:
- 249-6929
- 製造零件編號:
- IDH16G120C5XKSA1
- 製造商:
- Infineon
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可享批量折扣
小計(1 件)*
TWD199.00
(不含稅)
TWD208.95
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 28 件從 2026年3月02日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 4 | TWD199.00 |
| 5 + | TWD179.00 |
* 參考價格
- RS庫存編號:
- 249-6929
- 製造零件編號:
- IDH16G120C5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Industrial Power Control Diode Silicon Carbide Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | PG-TO-220 | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | IDH16G120C5 | |
| Rectifier Type | Silicon Carbide Schottky Diode | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 410μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.85V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Industrial Power Control Diode Silicon Carbide Schottky Diode | ||
Mount Type Through Hole | ||
Package Type PG-TO-220 | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series IDH16G120C5 | ||
Rectifier Type Silicon Carbide Schottky Diode | ||
Pin Count 2 | ||
Peak Reverse Current Ir 410μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.85V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide material. It does not have reverse recovery current and forward recovery. It has temperature independent switching behaviour. Low forward voltage even at high operating temperature. It has tight forward voltage distribution and excellent thermal performance. It has extended surge current capability.
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced hea tsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
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