Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 30 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 913-4070
- 製造零件編號:
- IRLML6346TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD12,000.00
(不含稅)
TWD12,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 3,000 件從 2026年10月15日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD4.00 | TWD12,000.00 |
| 15000 + | TWD4.00 | TWD12,000.00 |
* 參考價格
- RS庫存編號:
- 913-4070
- 製造零件編號:
- IRLML6346TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.4A Maximum Continuous Drain Current - IRLML6346TRPBF
This MOSFET is a compact N-channel enhancement-mode transistor designed for surface-mount power switching and management in compact electronic assemblies. It operates across a wide ambient range and is intended for low-voltage DC switching tasks where efficient conduction and modest power dissipation are required.
Features and Benefits:
• Low conduction resistance of 80mΩ enabling reduced I2R losses
• Continuous drain current rating of 3.4A allowing moderate load handling
• Drain‑source voltage capability of 30V for low-voltage power rails
• Gate charge of 2.9nC supporting fast gate transitions
• Gate withstand of 12V permitting standard drive voltages
• Maximum power dissipation 1.3W supporting sustained switching
• Continuous drain current rating of 3.4A allowing moderate load handling
• Drain‑source voltage capability of 30V for low-voltage power rails
• Gate charge of 2.9nC supporting fast gate transitions
• Gate withstand of 12V permitting standard drive voltages
• Maximum power dissipation 1.3W supporting sustained switching
Applications
• Suitable for DC-DC converter switching stages
• Ideal for battery management and power-rail control
• Used with motor-driver gate stages in compact devices
• Can be used for load-switching in portable electronics
• Appropriate for general-purpose power management on SMD boards
• Ideal for battery management and power-rail control
• Used with motor-driver gate stages in compact devices
• Can be used for load-switching in portable electronics
• Appropriate for general-purpose power management on SMD boards
What thermal limits should be considered in design?
The device functions from -55°C up to 150°C, so thermal planning must account for ambient plus junction rise and ensure adequate PCB copper or heatsinking to maintain junction temperatures within that range.
How does the package type affect assembly and layout?
The SOT-23 surface-mount package requires minimal board space and standard pick-and-place processes
layout should include short thermal and current traces to exploit conduction performance.
What switching behaviour can be expected during fast transitions?
With a typical gate charge of 2.9nC, gate driver sizing should match desired rise/fall times to balance switching losses and EMI for fast-edge applications.
Are there constraints on gate drive voltage?
The gate may be driven up to 12V maximum
designs should limit gate amplitude to avoid exceeding this rating while ensuring reliable enhancement.
相關連結
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML6346TRPBF
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23