Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23

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RS庫存編號:
165-7763
製造零件編號:
IRLML2030TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1nC

Maximum Power Dissipation Pd

1.3W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

No

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
PH

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 100mΩ Maximum Drain Source Resistance - IRLML2030TRPBF


This MOSFET is a compact N-channel enhancement device designed for low-power switching in small-form-factor surface-mount assemblies. It is intended for applications requiring moderate current handling and a 30V blocking capability, performing switching duties across a wide ambient range from cold to high-temperature environments.

Features and Benefits:


• Low on-resistance 100mΩ reduces conduction losses and heat
• 30V drain-source rating permits moderate-voltage switching
• Continuous drain current 2.7A supports sustained load operation
• Low gate charge 1nC enables fast, efficient switching
• Maximum power dissipation 1.3W allows thermal budgeting
• Gate-source withstand 20V provides input margin for drivers

Applications


• Suitable for battery protection and load switching circuits
• Ideal for portable device power-management stages
• Used with DC-DC converters in small SMD designs
• Can be used for LED drivers and small motor control
• Suitable for signal-level switching in consumer electronics

What thermal range can it operate within?


It functions from -55°C up to 150°C, enabling use across extreme ambient conditions.

How is it packaged for PCB assembly?


It is supplied in a SOT-23 surface-mount package for compact board placement.

What electrical role does the device serve in switching designs?


It acts as a low-voltage switch transistor, handling on/off control while limiting conduction losses due to its specified RDS(on).

How small is the component footprint for layout planning?


The device measures 3.04 x 1.4 x 1.02mm, allowing tight component packing on SMD boards.

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