Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 165-7766
- 製造零件編號:
- IRLML6246TRPBF
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD11,400.00
(不含稅)
TWD11,970.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD3.80 | TWD11,400.00 |
| 6000 + | TWD3.70 | TWD11,100.00 |
* 參考價格
- RS庫存編號:
- 165-7766
- 製造零件編號:
- IRLML6246TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 66mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 66mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRLML6246TRPBF
This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in surface-mount assemblies. It operates across a wide temperature range and accepts gate-drive levels compatible with common control circuits. The package and electrical characteristics make it appropriate for space‑constrained boards requiring efficient switching performance without elevated power‑handling requirements.
Features and Benefits:
• Maximum drain-source voltage 20V enables low-voltage switching applications
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins
Applications
• Suitable for battery-management switching in portable systems
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits
What thermal extremes can this device tolerate in operation?
It is specified to operate from -55 °C up to 150 °C, allowing use in environments with wide temperature fluctuations.
How does the package influence PCB layout and assembly?
The SOT‑23 surface‑mount format with three pins reduces board area and supports automated pick‑and‑place and reflow processes.
What is the expected behaviour under higher gate voltages?
The device limits gate‑source ratings to 12V maximum, so gate drives should remain within this threshold to prevent gate‑oxide stress.
How does the device perform under continuous load?
Continuous drain current is rated at 4.1A while thermal dissipation is constrained to 1.3 W, so adequate copper area or heatsinking is required to maintain safe junction temperatures.
相關連結
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