Vishay SIJ Type N-Channel MOSFET, 56.7 A, 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3

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TWD270.88

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包裝方式：
RS庫存編號:
279-9934
製造零件編號:
SIJ4108DP-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56.7A

Maximum Drain Source Voltage Vds

100V

Series

SIJ

Package Type

SO-8L

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

69.4W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.13mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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