STMicroelectronics GaN N-Channel MOSFET Transistor, 25 A, 750 V, 4-Pin PowerFLAT 5x6 HV SGT65R65AL
- RS庫存編號:
- 275-1318
- 製造零件編號:
- SGT65R65AL
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 275-1318
- 製造零件編號:
- SGT65R65AL
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 750 V | |
| Package Type | PowerFLAT 5x6 HV | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | GaN | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 750 V | ||
Package Type PowerFLAT 5x6 HV | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material GaN | ||
- COO (Country of Origin):
- CN
The STMicroelectronics e-mode powerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge