STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET, 35 A, 650 V N, 5-Pin PowerFlat HV ST8L65N050DM9
- RS庫存編號:
- 762-551
- 製造零件編號:
- ST8L65N050DM9
- 製造商:
- STMicroelectronics
N
可享批量折扣
小計（1 件）*
TWD167.00
(不含稅)
TWD175.35
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 300 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD167.00 |
| 10 - 49 | TWD162.00 |
| 50 - 99 | TWD157.00 |
| 100 + | TWD135.00 |
* 參考價格
- RS庫存編號:
- 762-551
- 製造零件編號:
- ST8L65N050DM9
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFlat HV | |
| Series | ST8L65N0 | |
| Mount Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 167W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.95mm | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFlat HV | ||
Series ST8L65N0 | ||
Mount Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 167W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Height 0.95mm | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
相關連結
- STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET 650 V N, 5-Pin PowerFlat HV ST8L65N065DM9
- STMicroelectronics 650 V 6 A Diode 5-Pin PowerFlat HV
- STMicroelectronics 650 V 6 A Diode 5-Pin PowerFlat HV STPSC6H065DLF
- STMicroelectronics M6 Type N-Channel MOSFET 600 V, 5-Pin PowerFlat HV
- STMicroelectronics M6 Type N-Channel MOSFET 600 V, 5-Pin PowerFlat HV STL19N60M6
- STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerFLAT
- STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V
- STMicroelectronics ST8L65 Type N-Channel Single MOSFETs 650 V Enhancement, 5-Pin PowerFLAT ST8L65N044M9