STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT
- RS庫存編號:
- 213-3941
- 製造零件編號:
- SCTL35N65G2V
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 卷，共 3000 件）*
TWD1,658,400.00
(不含稅)
TWD1,741,320.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月01日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD552.80 | TWD1,658,400.00 |
| 15000 + | TWD541.70 | TWD1,625,100.00 |
* 參考價格
- RS庫存編號:
- 213-3941
- 製造零件編號:
- SCTL35N65G2V
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTL35N65G2V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.3V | |
| Maximum Power Dissipation Pd | 417W | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTL35N65G2V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.3V | ||
Maximum Power Dissipation Pd 417W | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Source sensing pin for increased efficiency
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