STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET, 44 A, 650 V N, 5-Pin PowerFlat HV ST8L65N065DM9
- RS庫存編號:
- 762-552
- 製造零件編號:
- ST8L65N065DM9
- 製造商:
- STMicroelectronics
N
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- RS庫存編號:
- 762-552
- 製造零件編號:
- ST8L65N065DM9
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFlat HV | |
| Series | ST8L65N0 | |
| Mount Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 223W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFlat HV | ||
Series ST8L65N0 | ||
Mount Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 223W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Length 8.1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 8.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
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