STMicroelectronics M6 Type N-Channel MOSFET, 11 A, 600 V, 5-Pin PowerFlat HV STL19N60M6
- RS庫存編號:
- 203-3439
- 製造零件編號:
- STL19N60M6
- 製造商:
- STMicroelectronics
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TWD101.00
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* 參考價格
- RS庫存編號:
- 203-3439
- 製造零件編號:
- STL19N60M6
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | M6 | |
| Package Type | PowerFlat HV | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 308mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Operating Temperature | 175°C | |
| Width | 0.95 mm | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series M6 | ||
Package Type PowerFlat HV | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 308mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Operating Temperature 175°C | ||
Width 0.95 mm | ||
Length 8.1mm | ||
Height 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel MDmesh M6 Power MOSFET incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. Previous generation of MDmesh devices through its new M6 technology, is built by STMicroelectronics. This combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Low gate input resistance
100% avalanche tested
Zener-protected
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