STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

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小計（1 組，共 10 件）*

TWD257.00

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TWD269.80

(含稅)

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單位
每單位
每膠帶*
10 - 90TWD25.70TWD257.00
100 - 240TWD24.40TWD244.00
250 - 490TWD22.60TWD226.00
500 - 990TWD20.80TWD208.00
1000 +TWD20.00TWD200.00

* 參考價格

包裝方式：
RS庫存編號:
151-423
製造零件編號:
STL3NM60N
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Series

MDmesh II

Package Type

PowerFLAT (3.3 x 3.3) HV

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

9.5nC

Maximum Power Dissipation Pd

22W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

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