STMicroelectronics ST8L65 Type N-Channel Single MOSFETs, 58 A, 650 V Enhancement, 5-Pin PowerFLAT ST8L65N044M9
- RS庫存編號:
- 648-109
- 製造零件編號:
- ST8L65N044M9
- 製造商:
- STMicroelectronics
可享批量折扣
小計（1 件）*
TWD240.00
(不含稅)
TWD252.00
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD240.00 |
| 10 - 49 | TWD195.00 |
| 50 - 99 | TWD148.00 |
| 100 + | TWD141.00 |
* 參考價格
- RS庫存編號:
- 648-109
- 製造零件編號:
- ST8L65N044M9
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFLAT | |
| Series | ST8L65 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 166W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.10mm | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFLAT | ||
Series ST8L65 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 166W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 8.10mm | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. It has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
Excellent switching performance
PowerFLAT 8x8 HV package
RoHS compliant
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