STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 件)*

TWD608.00

(不含稅)

TWD638.40

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看

單位
每單位
1 - 749TWD608.00
750 - 1499TWD593.00
1500 +TWD585.00

* 參考價格

包裝方式:
RS庫存編號:
213-3942
製造零件編號:
SCTL35N65G2V
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerFLAT

Series

SCTL35N65G2V

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.3V

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

417W

Maximum Operating Temperature

175°C

Height

0.95mm

Length

8.1mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

Source sensing pin for increased efficiency

相關連結