Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3
- RS庫存編號:
- 268-8295
- 製造零件編號:
- SIHB6N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD325.00
(不含稅)
TWD341.25
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,000 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD65.00 | TWD325.00 |
| 10 - 20 | TWD58.40 | TWD292.00 |
| 25 - 95 | TWD57.20 | TWD286.00 |
| 100 + | TWD47.20 | TWD236.00 |
* 參考價格
- RS庫存編號:
- 268-8295
- 製造零件編號:
- SIHB6N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-263 | |
| Series | SIHB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.95Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-263 | ||
Series SIHB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.95Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay E series power MOSFET has low switching and conduction losses, it is used in applications such as switch mode power supplies, server power supplies, and power factor correction power supplies. It has integrated zener diode for ESD protection.
Low effective capacitance
Avalanche energy rated
Low figure of merit
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