Name: Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3
Brand: Vishay
SKU: 268-8295
Price: 68.25 TWD
Availability: Discontinued

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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-263
	Series	SIHB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.95Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	62.5W
	Maximum Gate Source Voltage Vgs	±30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	10.67mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-263
	Series SIHB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.95Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 62.5W
	Maximum Gate Source Voltage Vgs ±30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 10.67mm
	Automotive Standard No

Datasheet - SIHB6N80AE-GE3

COO (Country of Origin):: CN

The Vishay E series power MOSFET has low switching and conduction losses, it is used in applications such as switch mode power supplies, server power supplies, and power factor correction power supplies. It has integrated zener diode for ESD protection.

Low effective capacitance

Avalanche energy rated

Low figure of merit

Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3

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