Vishay E Type N-Channel Power MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3
- RS庫存編號:
- 228-2852
- 製造零件編號:
- SiHD5N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 10 件)*
TWD373.00
(不含稅)
TWD391.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,740 件從 2026年8月10日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD37.30 | TWD373.00 |
| 50 - 90 | TWD36.30 | TWD363.00 |
| 100 - 240 | TWD35.40 | TWD354.00 |
| 250 - 990 | TWD34.40 | TWD344.00 |
| 1000 + | TWD33.70 | TWD337.00 |
* 參考價格
- RS庫存編號:
- 228-2852
- 製造零件編號:
- SiHD5N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SiHD5N80AE-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification in surface-mounted power electronics. It operates across a wide temperature range and is intended for applications requiring robust blocking capability and moderate continuous current handling while occupying a TO-252 surface-mount footprint.
Features and Benefits:
• 850V drain-source rating enabling high-voltage switching
• 1.35Ω Rds(on) supports controlled conduction losses
• 4.4A continuous drain current for steady load operation
• 62.5W maximum dissipation for thermal performance headroom
• 11nC typical gate charge for faster switching transitions
• 30V gate-source limit allowing standard gate-drive ranges
• 1.35Ω Rds(on) supports controlled conduction losses
• 4.4A continuous drain current for steady load operation
• 62.5W maximum dissipation for thermal performance headroom
• 11nC typical gate charge for faster switching transitions
• 30V gate-source limit allowing standard gate-drive ranges
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive front-ends
• Used for switch-mode power regulation stages
• Can be used for telecom and utility line-interface circuits
• Appropriate for compact surface-mount power modules
• Ideal for industrial motor-drive front-ends
• Used for switch-mode power regulation stages
• Can be used for telecom and utility line-interface circuits
• Appropriate for compact surface-mount power modules
What operating temperature range can I expect for reliable operation?
The device functions from -55°C up to 150°C, permitting use in demanding thermal environments.
How should I consider gate-drive design with this component?
Design for a maximum Vgs of 30V and account for the typical 11nC gate charge when sizing drivers to meet switching speed and drive-current requirements.
What packaging and mounting considerations apply for assembly?
It is supplied in a TO-252 package intended for surface mounting, so land pattern and thermal vias should be planned to manage power dissipation.
Is this suitable for automotive-certified designs?
It is not specified to meet automotive standards, so it should be evaluated against any vehicle-specific requirements before use.
相關連結
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-251 SIHU6N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3
