Vishay E Type N-Channel Power MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

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包裝方式:
RS庫存編號:
228-2852
製造零件編號:
SiHD5N80AE-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

11nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SiHD5N80AE-GE3


This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification in surface-mounted power electronics. It operates across a wide temperature range and is intended for applications requiring robust blocking capability and moderate continuous current handling while occupying a TO-252 surface-mount footprint.

Features and Benefits:


• 850V drain-source rating enabling high-voltage switching
• 1.35Ω Rds(on) supports controlled conduction losses
• 4.4A continuous drain current for steady load operation
• 62.5W maximum dissipation for thermal performance headroom
• 11nC typical gate charge for faster switching transitions
• 30V gate-source limit allowing standard gate-drive ranges

Applications


• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive front-ends
• Used for switch-mode power regulation stages
• Can be used for telecom and utility line-interface circuits
• Appropriate for compact surface-mount power modules

What operating temperature range can I expect for reliable operation?


The device functions from -55°C up to 150°C, permitting use in demanding thermal environments.

How should I consider gate-drive design with this component?


Design for a maximum Vgs of 30V and account for the typical 11nC gate charge when sizing drivers to meet switching speed and drive-current requirements.

What packaging and mounting considerations apply for assembly?


It is supplied in a TO-252 package intended for surface mounting, so land pattern and thermal vias should be planned to manage power dissipation.

Is this suitable for automotive-certified designs?


It is not specified to meet automotive standards, so it should be evaluated against any vehicle-specific requirements before use.

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