製造零件編號

Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-252

RS庫存編號:: 200-6867
製造零件編號:: SIHD6N80AE-GE3
製造商:: Vishay

Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 25 件）*

TWD557.50

(不含稅)

TWD585.50

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月22日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
25 - 725	TWD22.30	TWD557.50
750 - 1475	TWD21.80	TWD545.00
1500 +	TWD21.50	TWD537.50

* 參考價格

RS庫存編號:: 200-6867
製造零件編號:: SIHD6N80AE-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	850V
	Series	E
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	950mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	62.5W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	22.5nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 850V
	Series E
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 950mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 62.5W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 22.5nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Document- SIHD6N80AE-GE3

The Vishay SIHD6N80AE-GE3 is a E series power MOSFET.

Low figure-of-merit

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

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