Vishay E Type N-Channel Power MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220

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50 - 50TWD23.90TWD1,195.00
100 - 450TWD23.30TWD1,165.00
500 - 950TWD22.70TWD1,135.00
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2000 +TWD21.60TWD1,080.00

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RS庫存編號:
228-2839
製造零件編號:
SiHA5N80AE-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

29W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 850V Drain‑Source Voltage, 3A Maximum Continuous Drain Current - SiHA5N80AE-GE3


This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial electronic systems. Supplied in a TO-220 through-hole package with three connections, it suits applications requiring discrete mounting and thermal management. The component operates across a wide temperature range and is constructed to meet RoHS standards.

Features and Benefits:


• 850V maximum drain voltage enables high-voltage switching
• 3A continuous drain current supports moderate load currents
• 1.35Ω drain-source resistance reduces conduction losses
• 29W power dissipation allows sustained thermal loading
• 11nC typical gate charge improves switching efficiency
• ±30V gate-source tolerance protects gate-drive flexibility

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor-drive front-ends with discrete components
• Used for lighting ballast control in high-voltage systems
• Can be used for inverter-stage switching in power conversion

What temperature range can it withstand during operation?


It is rated to operate down to -55°C and up to 150°C, permitting use in environments with wide thermal variation.

How does the package choice affect thermal management?


The TO-220 package offers a metal tab suitable for heatsinking, allowing improved heat extraction when mounted to an external cooler.

What gate-drive considerations are necessary for this device?


The gate should be driven within ±30V limits and sized to accommodate an 11nC typical gate charge to ensure reliable switching performance.

Is the device compliant with environmental substance restrictions?


It conforms to RoHS requirements, indicating restriction of certain hazardous substances in its construction.

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