Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- RS庫存編號:
- 228-2837
- 製造零件編號:
- SIHA24N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD321.00
(不含稅)
TWD337.04
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 668 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD160.50 | TWD321.00 |
| 10 - 18 | TWD156.50 | TWD313.00 |
| 20 - 24 | TWD153.00 | TWD306.00 |
| 26 - 98 | TWD150.00 | TWD300.00 |
| 100 + | TWD143.50 | TWD287.00 |
* 參考價格
- RS庫存編號:
- 228-2837
- 製造零件編號:
- SIHA24N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Drain-Source Voltage, 9A Continuous Drain Current - SIHA24N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-control roles in through-hole assemblies. It is supplied in a TO-220 package suitable for traditional mounting methods and is engineered to operate across a wide thermal span for demanding electronic systems.
Features and Benefits:
• 850V drain capability for high-voltage switching applications
• 9A continuous drain current for sustained power handling
• 184mΩ Rds(on) reduces conduction losses at operating currents
• 35W maximum dissipation allows significant power throughput
• 59nC typical gate charge enables predictable switching dynamics
• 30V gate rating supports common gate-drive voltages
• 9A continuous drain current for sustained power handling
• 184mΩ Rds(on) reduces conduction losses at operating currents
• 35W maximum dissipation allows significant power throughput
• 59nC typical gate charge enables predictable switching dynamics
• 30V gate rating supports common gate-drive voltages
Applications
• Suitable for high-voltage switch-mode power supplies
• Used for industrial motor-drive switching stages
• Ideal for mid-power inverter and converter designs
• Can be used for DC-DC conversion in telecom equipment
• Suitable for laboratory and prototyping through-hole builds
• Used for industrial motor-drive switching stages
• Ideal for mid-power inverter and converter designs
• Can be used for DC-DC conversion in telecom equipment
• Suitable for laboratory and prototyping through-hole builds
What temperature extremes can it withstand in operation?
It functions from -55°C up to 150°C, allowing use in harsh thermal environments.
How does the forward voltage affect switching circuits?
The 1.2V forward voltage influences conduction drop during body-diode conduction and should be considered when estimating reverse-recovery losses.
Is the device suitable for automotive electronic systems?
It is not specified to automotive standards, so additional validation is recommended for vehicle applications.
What mounting and connection considerations apply for thermal management?
The TO-220 through-hole format permits direct heatsinking to the tab for improved thermal dissipation up to the stated power limit.
相關連結
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP17N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3