Vishay E Type N-Channel Power MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- RS庫存編號:
- 228-2840
- 製造零件編號:
- SiHA5N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 5 件)*
TWD199.00
(不含稅)
TWD208.95
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 855 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD39.80 | TWD199.00 |
| 10 - 20 | TWD39.20 | TWD196.00 |
| 25 - 95 | TWD37.80 | TWD189.00 |
| 100 - 495 | TWD36.80 | TWD184.00 |
| 500 + | TWD36.00 | TWD180.00 |
* 參考價格
- RS庫存編號:
- 228-2840
- 製造零件編號:
- SiHA5N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 29W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 29W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Drain‑Source Voltage, 3A Maximum Continuous Drain Current - SiHA5N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial electronic systems. Supplied in a TO-220 through-hole package with three connections, it suits applications requiring discrete mounting and thermal management. The component operates across a wide temperature range and is constructed to meet RoHS standards.
Features and Benefits:
• 850V maximum drain voltage enables high-voltage switching
• 3A continuous drain current supports moderate load currents
• 1.35Ω drain-source resistance reduces conduction losses
• 29W power dissipation allows sustained thermal loading
• 11nC typical gate charge improves switching efficiency
• ±30V gate-source tolerance protects gate-drive flexibility
• 3A continuous drain current supports moderate load currents
• 1.35Ω drain-source resistance reduces conduction losses
• 29W power dissipation allows sustained thermal loading
• 11nC typical gate charge improves switching efficiency
• ±30V gate-source tolerance protects gate-drive flexibility
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor-drive front-ends with discrete components
• Used for lighting ballast control in high-voltage systems
• Can be used for inverter-stage switching in power conversion
• Ideal for industrial motor-drive front-ends with discrete components
• Used for lighting ballast control in high-voltage systems
• Can be used for inverter-stage switching in power conversion
What temperature range can it withstand during operation?
It is rated to operate down to -55°C and up to 150°C, permitting use in environments with wide thermal variation.
How does the package choice affect thermal management?
The TO-220 package offers a metal tab suitable for heatsinking, allowing improved heat extraction when mounted to an external cooler.
What gate-drive considerations are necessary for this device?
The gate should be driven within ±30V limits and sized to accommodate an 11nC typical gate charge to ensure reliable switching performance.
Is the device compliant with environmental substance restrictions?
It conforms to RoHS requirements, indicating restriction of certain hazardous substances in its construction.
相關連結
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP17N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3
