Vishay E Type N-Channel Power MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- RS庫存編號:
- 228-2840
- 製造零件編號:
- SiHA5N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD351.00
(不含稅)
TWD368.55
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 855 件從 2026年8月10日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD70.20 | TWD351.00 |
| 10 - 20 | TWD69.20 | TWD346.00 |
| 25 - 95 | TWD66.60 | TWD333.00 |
| 100 - 495 | TWD65.00 | TWD325.00 |
| 500 + | TWD63.40 | TWD317.00 |
* 參考價格
- RS庫存編號:
- 228-2840
- 製造零件編號:
- SiHA5N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Drain Source Voltage, 3A Continuous Drain Current - SiHA5N80AE-GE3
This power MOSFET is a high‑voltage N‑channel transistor designed for switching and amplification tasks in demanding electronic systems. It operates across a wide thermal range and is supplied in a through‑hole TO‑220 package for straightforward board mounting, making it suitable for industrial assemblies where robust voltage handling and accessible mounting are required.
Features and Benefits:
• 850V drain rating enables high‑voltage switching applications
• 3A continuous current supports moderate load currents
• 29W power dissipation allows sustained thermal loading
• 1.35Ω Rds(on) provides predictable conduction losses
• 11nC typical gate charge ensures manageable gate‑drive requirements
• 30V maximum gate voltage permits common gate‑drive voltages
• 3A continuous current supports moderate load currents
• 29W power dissipation allows sustained thermal loading
• 1.35Ω Rds(on) provides predictable conduction losses
• 11nC typical gate charge ensures manageable gate‑drive requirements
• 30V maximum gate voltage permits common gate‑drive voltages
Applications
• Suitable for high‑voltage power conversion stages
• Ideal for industrial motor‑drive front ends
• Used with snubbered switching supplies and inverters
• Can be used for high‑voltage laboratory test equipment
• Suitable for discrete switch implementations in power control
• Ideal for industrial motor‑drive front ends
• Used with snubbered switching supplies and inverters
• Can be used for high‑voltage laboratory test equipment
• Suitable for discrete switch implementations in power control
What temperature extremes can it withstand during operation?
It is specified to function from -55°C up to 150°C, covering a wide industrial operating envelope.
How is it mounted and integrated into legacy designs?
The component comes in a TO‑220 through‑hole format, facilitating soldered or screw‑down heatsink attachments and easy replacement on conventional boards.
What gate‑drive considerations should be observed?
Ensure gate‑drive amplitude does not exceed 30V and provide sufficient drive strength for the 11nC typical gate charge to achieve the desired switching speeds.
Is it suitable for automotive‑certified projects?
It is not supplied with automotive standard approval and should not be assumed to be compliant with vehicle‑specific qualification requirements.
相關連結
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP17N80AEF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3