製造零件編號

Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220

RS庫存編號:: 228-2878
製造零件編號:: SIHP21N80AEF-GE3
製造商:: Vishay

Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD3,140.00

(不含稅)

TWD3,297.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 350 個，準備發貨

單位	每單位	每管*
50 - 50	TWD62.80	TWD3,140.00
100 - 450	TWD61.30	TWD3,065.00
500 +	TWD59.80	TWD2,990.00

* 參考價格

RS庫存編號:: 228-2878
製造零件編號:: SIHP21N80AEF-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	165.3A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-220
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	47nC
	Maximum Power Dissipation Pd	179W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 165.3A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-220
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 47nC
	Maximum Power Dissipation Pd 179W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SIHP21N80AEF-GE3

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220

訂單超過 $1,300.00 免費送貨

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