Vishay E Type N-Channel Power MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3
- RS庫存編號:
- 228-2849
- 製造零件編號:
- SIHD11N80AE-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD428.00
(不含稅)
TWD449.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,995 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD85.60 | TWD428.00 |
| 50 - 95 | TWD83.20 | TWD416.00 |
| 100 - 245 | TWD81.20 | TWD406.00 |
| 250 - 995 | TWD79.60 | TWD398.00 |
| 1000 + | TWD77.20 | TWD386.00 |
* 參考價格
- RS庫存編號:
- 228-2849
- 製造零件編號:
- SIHD11N80AE-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 78W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 78W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 8A Maximum Continuous Drain Current - SIHD11N80AE-T1-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for power-switching duties in surface-mounted applications. It operates across an extended ambient range and is suited to circuits requiring elevated drain-source voltage capability and modest continuous current handling. The device is supplied in a TO-252 package and complies with RoHS.
Features and Benefits:
• 850V drain-source rating enables high-voltage switching
• 8A continuous drain current supports moderate load currents
• 450mΩ Rds(on) reduces conduction losses under load
• 78W maximum power dissipation handles significant thermal stress
• 28nC total gate charge allows faster gate transitions
• 1.2V forward diode drop minimises reverse conduction losses
• 8A continuous drain current supports moderate load currents
• 450mΩ Rds(on) reduces conduction losses under load
• 78W maximum power dissipation handles significant thermal stress
• 28nC total gate charge allows faster gate transitions
• 1.2V forward diode drop minimises reverse conduction losses
Applications
• Used for high-voltage switching converters and inverters
• Suitable for industrial power supplies and auxiliary rails
• Ideal for half‑bridge and switch‑mode topologies
• Can be used for motor-drive gate stages with modest current
• Used with discrete power-management boards in consumer equipment
• Suitable for industrial power supplies and auxiliary rails
• Ideal for half‑bridge and switch‑mode topologies
• Can be used for motor-drive gate stages with modest current
• Used with discrete power-management boards in consumer equipment
What gate‑drive voltage range should I design for?
The device tolerates up to 30V between gate and source
design gate drivers within this limit and select drive voltages appropriate for switching speed and safe margins.
How does temperature affect device operation?
Rated for operation from -55°C to 150°C, thermal performance will dictate permissible duty cycles and may require heatsinking or PCB thermal vias to maintain junction temperatures under high dissipation.
What mounting and layout considerations are important?
As a TO-252 surface‑mount package, ensure adequate copper area for heat spreading and short, low‑inductance tracks for drain and source to improve thermal and switching performance.
How does the channel type influence circuit design?
The N‑channel enhancement mode requires a positive gate‑to‑source voltage to conduct, so gate‑drive polarity and level should be provided accordingly in the control circuitry.
相關連結
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-251 SIHU6N80AE-GE3