Vishay E Type N-Channel MOSFET, 16.3 A, 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3
- RS庫存編號:
- 228-2868
- 製造零件編號:
- SIHG21N80AEF-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD197.00
(不含稅)
TWD206.84
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月20日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD98.50 | TWD197.00 |
| 10 - 24 | TWD96.50 | TWD193.00 |
| 26 - 98 | TWD93.00 | TWD186.00 |
| 100 - 498 | TWD91.00 | TWD182.00 |
| 500 + | TWD88.00 | TWD176.00 |
* 參考價格
- RS庫存編號:
- 228-2868
- 製造零件編號:
- SIHG21N80AEF-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16.3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-247 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16.3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-247 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
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