Name: Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
Brand: Vishay
SKU: 268-8289
Price: 112.24 TWD
Availability: Discontinued

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選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	SIHB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.08Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	227W
	Maximum Gate Source Voltage Vgs	±30 V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	10.67mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series SIHB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.08Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 227W
	Maximum Gate Source Voltage Vgs ±30 V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 10.67mm
	Automotive Standard No

Datasheet - SIHB080N60E-GE3

COO (Country of Origin):: CN

The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance

Avalanche energy rated

Low figure of merit

Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

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