Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3

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RS庫存編號:
268-8287
製造零件編號:
SIHA150N60E-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK SO-8DC

Series

SIHA

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.158Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Vishay SIHA Series MOSFET, 650V Drain Source Voltage, 9A Continuous Drain Current - SIHA150N60E-GE3


This MOSFET is a high-voltage N-channel transistor designed for power switching in surface-mount applications. It operates across a broad temperature range and is intended for circuits requiring substantial voltage headroom and moderate continuous current. The device is supplied in a PowerPAK SO-8DC package suitable for compact board layouts.

Features and Benefits:


• 650V drain-to-source rating enables high-voltage switching
• 9A continuous drain current supports moderate power delivery
• 0.158Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows elevated load handling
• 36nC typical gate charge provides predictable switching control
• ±30V gate tolerance permits robust gate-drive margins

Applications


• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used for server and telecoms power-management modules
• Can be used for LED drivers requiring high-voltage switches
• Appropriate for inverter and UPS power stages

What mounting style does it require for PCB assembly?


It is a surface-mount device supplied in a PowerPAK SO-8DC package, designed for reflow soldering onto PCB land patterns compatible with SO-8DC footprints.

How does it behave in extended temperature environments?


The transistor is rated to operate from -55°C up to 150°C, permitting use in systems exposed to low ambient conditions and elevated internal heating.

What gate-drive constraints should be observed?


The gate-to-source voltage must not exceed ±30V, so gate drivers should be limited within those bounds to prevent gate-oxide stress.

What standard restricts hazardous substances in this component?


The device conforms to RoHS requirements, indicating restrictions on certain hazardous materials during manufacture.

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