Vishay Type N-Channel MOSFET, 421 A, 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3
- RS庫存編號:
- 252-0249
- 製造零件編號:
- SIDR500EP-T1-RE3
- 製造商:
- Vishay
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TWD229.00
(不含稅)
TWD240.44
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD114.50 | TWD229.00 |
| 50 - 98 | TWD109.00 | TWD218.00 |
| 100 - 248 | TWD102.50 | TWD205.00 |
| 250 - 998 | TWD96.00 | TWD192.00 |
| 1000 + | TWD88.00 | TWD176.00 |
* 參考價格
- RS庫存編號:
- 252-0249
- 製造零件編號:
- SIDR500EP-T1-RE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 421A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00068mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 421A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00068mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Higher power density with very low RDS(on)
Thermally enhanced compact package
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