Name: Vishay SIDR Type N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
Brand: Vishay
SKU: 268-8284
Price: 56.91 TWD
Availability: Discontinued

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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	227A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PowerPAK SO-8DC
	Series	SIDR
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00174Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	102nC
	Maximum Power Dissipation Pd	150W
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5.15mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 227A
	Maximum Drain Source Voltage Vds 60V
	Package Type PowerPAK SO-8DC
	Series SIDR
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00174Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 102nC
	Maximum Power Dissipation Pd 150W
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5.15mm
	Automotive Standard No

Datasheet - SIDR626EP-T1-RE3

COO (Country of Origin):: TW

The Vishay N channel TrenchFET generation 4 power MOSFET has TOP side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.

Tuned for the lowest figure of merit

ROHS compliant

UIS tested 100 percent

Vishay SIDR Type N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3

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