Vishay Type N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
- RS庫存編號:
- 239-8617
- 製造零件編號:
- SiDR626LEP-T1-RE3
- 製造商:
- Vishay
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TWD203.00
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TWD213.16
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD101.50 | TWD203.00 |
| 50 - 98 | TWD100.00 | TWD200.00 |
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| 250 - 998 | TWD96.00 | TWD192.00 |
| 1000 + | TWD94.50 | TWD189.00 |
* 參考價格
- RS庫存編號:
- 239-8617
- 製造零件編號:
- SiDR626LEP-T1-RE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 218A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Operating Temperature | 125°C | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 218A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Operating Temperature 125°C | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.
Top side cooling feature provides additional venue for thermal transfer
Very low resistance
UIS tested
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