Vishay Type N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 3000 件)*

TWD184,500.00

(不含稅)

TWD193,740.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 3,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
3000 - 12000TWD61.50TWD184,500.00
15000 +TWD59.60TWD178,800.00

* 參考價格

RS庫存編號:
239-8616
製造零件編號:
SiDR626LEP-T1-RE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

218A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Depletion

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120W

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

125°C

Width

5.15 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.

Top side cooling feature provides additional venue for thermal transfer

Very low resistance

UIS tested

相關連結