Vishay Type N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC
- RS庫存編號:
- 239-8614
- 製造零件編號:
- SiDR220EP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD283,200.00
(不含稅)
TWD297,360.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD94.40 | TWD283,200.00 |
| 15000 + | TWD84.90 | TWD254,700.00 |
* 參考價格
- RS庫存編號:
- 239-8614
- 製造零件編號:
- SiDR220EP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 415A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00082Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 415A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00082Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 25 V and 175 °C temperature. This MOSFET used for high power density, synchronous buck converter and load switching.
Top side cooling feature provides additional venue for thermal transfer
Low power loss
UIS tested
相關連結
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- Vishay Type N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC